Analysis of dark current contributions in mercury cadmium telluride junction diodes
Analysis of dark current contributions in mercury cadmium telluride junction diodes
复制标题
DOI:
10.1016/s1350-4495(02)00159-7
复制
发表时间:
2002-12
影响因子:
3.3
通讯作者:
V. Gopal;S. Singh;R. M. Mehra
中科院分区:
文献类型:
--
作者:
V. Gopal;S. Singh;R. M. Mehra