Self Vth-Compensating CMOS On-Chip Rectifier for Inductively Powered Implantable Medical Devices
Self Vth-Compensating CMOS On-Chip Rectifier for Inductively Powered Implantable Medical Devices
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适用于感应供电植入式医疗设备的自 Vth 补偿 CMOS 片上整流器
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
M. Kovác
中科院分区：
文献类型：
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作者：
M. Potocný;V. Stopjaková;M. Kovác
本文讨论了一种可用于为植入式医疗设备感应供电的射频整流器的设计，更具体地说，是一种完全集成的片上设备。这种应用需要满足特定的挑战，主要是发送器和接收器之间的弱耦合，这导致整流器的输入功率很小。片上接收器线圈的使用对工作频率进行了限制，该频率被设置为200 MHz。由于片上电路元件的质量较低，输入电压也相当低。所提出的整流器采用差动驱动交叉耦合桥式拓扑。采用体偏置技术和三势垒NMOS晶体管，无需额外的电路即可在低输入电压下获得更好的性能。该整流器采用130 nm CMOS工艺设计。研究了输入电压、功率和负载电阻对功率转换效率和输出功率的影响。观察到输出功率显著增加。
This paper deals with the design of a RF rectifier usable for inductively powering implantable medical devices, more specifically a fully integrated on–chip device. This application has specific challenges that need to be met, mainly the weak coupling between the transmitter and receiver, which results in small input power for the rectifier. The use of an on–chip receiver coil puts restrictions on the operating frequency, which is set to 200 MHz. The input voltage is also rather low due to the low quality of on–chip circuit components. The proposed rectifier uses the differential drive cross-coupled bridge topology. A body biasing technique and triple-well NMOS transistors are used to achieve better performance at the low input voltage without the need for additional circuitry. The rectifier was designed in a 130 nm CMOS technology. Effects of the input voltage, power and load resistance on the power conversion efficiency and the output power were investigated. A significant increase in the output power was observed.