Ni-Zn-Co ferrite films prepared at 90/spl deg/C having /spl mu/''=30 at 3 GHz
Ni-Zn-Co ferrite films prepared at 90/spl deg/C having /spl mu/''=30 at 3 GHz
复制标题
在 90/spl deg/C 下制备的 Ni-Zn-Co 铁氧体薄膜，在 3 GHz 下具有 /spl mu/=30
DOI：
10.1109/tmag.2002.802484
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
Abe Masanori
中科院分区：
文献类型：
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作者：
N. Matsushita;T. Nakamura;Abe Masanori
采用旋喷铁氧体镀法在90/spl deg/C低温下制备了Ni-Zn-Co铁氧体薄膜（Ni/sub 0.16-0.21/Zn/sub 0.30-0.36/Co/sub x/ Fe/sub 2.38-2.46/O/sub 4/，x=0/spl sim/0.16）。所有膜的饱和磁化强度M/sub s/大于440 emu/cc。少量Co取代x使Ni-Zn铁氧体薄膜的磁各向异性由各向同性变为各向异性，易磁化轴平行于旋转基体上喷涂溶液的流动方向。在x=0.03时，双折射率H/sub c/和各向异性场H/sub k/取10和25 Oe的小值。在20 MHz-3 GHz范围内测量复磁导率，并且在x=0.03处实现120的非常高的静态磁导率/spl μ/1和900 MHz的谐振频率f/sub μ/1。这种Ni-Zn-Co铁氧体薄膜即使在3GHz下也表现出大的/spl μ/">30，适用于波吸收器，以抑制高达微波频率的器件之间的电磁干扰。
Ni-Zn-Co ferrite films (Ni/sub 0.16-0.21/Zn/sub 0.30-0.36/Co/sub x/ Fe/sub 2.38-2.46/O/sub 4/, x=0/spl sim/0.16) were deposited by spin-spray ferrite plating method at low temperature of 90/spl deg/C. All the films had a saturation magnetization M/sub s/ larger than 440 emu/cc. A small amount of Co substitution x into Ni-Zn ferrite films changed the magnetic anisotropy in film plane from isotropic to anisotropic and the magnetic easy axis was parallel to the flowing direction of the sprayed solutions on the rotating substrate. The coercivity H/sub c/ and anisotropy field H/sub k/ took small values of 10 and 25 Oe at x=0.03. The complex permeability was measured in the range 20 MHz-3 GHz and very high static permeability /spl mu/' of 120 and resonance frequency f/sub r/ of 900 MHz were achieved at x=0.03. Exhibiting large /spl mu/">30 even at 3 GHz, this Ni-Zn-Co ferrite film is applicable for wave absorbers to suppress the electro-magnetic interference among devices up to microwave frequencies.