Stochastic phase-change neurons

Stochastic phase-change neurons
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DOI:
10.1038/nnano.2016.70
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发表时间:
2016-08-01
影响因子:
38.3
通讯作者:
Eleftheriou, Evangelos
Eleftheriou, Evangelos
中科院分区:
材料科学1区
文献类型:
--
作者:
Tuma, Tomas;Pantazi, Angeliki;Eleftheriou, Evangelos

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Artificial neuromorphic systems based on populations of spiking neurons are an indispensable tool in understanding the human brain and in constructing neuromimetic computational systems. To reach areal and power efficiencies comparable to those seen in biological systems, electroionics-based and phase-change-based memristive devices have been explored as nanoscale counterparts of synapses. However, progress on scalable realizations of neurons has so far been limited. Here, we show that chalcogenide-based phase-change materials can be used to create an artificial neuron in which the membrane potential is represented by the phase configuration of the nanoscale phase-change device. By exploiting the physics of reversible amorphous-to-crystal phase transitions, we show that the temporal integration of postsynaptic potentials can be achieved on a nanosecond timescale. Moreover, we show that this is inherently stochastic because of the melt-quench-induced reconfiguration of the atomic structure occurring when the neuron is reset. We demonstrate the use of these phase-change neurons, and their populations, in the detection of temporal correlations in parallel data streams and in sub-Nyquist representation of high-bandwidth signals.