Spin relaxation characteristics in Ag nanowire covered with various oxides
Spin relaxation characteristics in Ag nanowire covered with various oxides
复制标题
各种氧化物覆盖的银纳米线的自旋弛豫特性
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
Y. Otani
中科院分区：
文献类型：
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作者：
S. Karube;H. Idzuchi;K. Kondou;Y. Fukuma;Y. Otani
我们利用非局域自旋阀结构研究了Ag纳米线表面覆盖Bi_2O_3，Al_2O_3，HfO_2，MgO和AgOx氧化层的自旋弛豫特性。自旋翻转概率，即在10 K下动量弛豫时间与自旋弛豫时间的比率，随着氧化物构成元素Mg、Al、Ag和Hf的原子序数而逐渐增加。令人惊讶的是，发现Bi 2 O3覆盖层与其他氧化物层相比将概率增加了一个数量级。这一发现表明，存在一个额外的自旋弛豫机制，如在Ag/Bi 2 O3界面的Rashba效应，这不能通过简单的Elliott-Yafet机制通过声子，杂质和表面散射解释。Ag/Bi 2 O3界面可以提供作为自旋到电荷互转换层的功能。
We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10 K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag and Hf. Surprisingly the Bi2O3 capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi2O3 interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity and surface scatterings. The Ag/Bi2O3 interface may provide functionality as a spin to charge interconversion layer.