Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology
Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology
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DOI：
10.1109/jlt.2004.834471
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发表时间：
2005-01-01
影响因子：
4.7
通讯作者：
Van Thourhout, D
中科院分区：
文献类型：
--
作者：
Bogaerts, W;Baets, R;Van Thourhout, D
高折射率对比、波长尺度结构是实现光子集成电路超紧凑集成的关键。研究了利用互补金属氧化物半导体加工技术，包括深紫外光刻技术，在绝缘体上的硅中制造这些纳米光子结构。结果表明，该技术可实现纳米光子集成电路的商业化生产。比较了光子导线和光子晶体波导用于光子积分的可能性。研究表明，在类似的制造技术下，光子导线在传输损耗方面至少比光子晶体波导好一个数量级。测量表明，光子导线的传输损耗低至0.24 dB/mm，而光子晶体波导的传输损耗为7.5 dB/mm。
High-index-contrast, wavelength-scale structures are key to ultracompact integration of photonic integrated circuits. The fabrication of these nanophotonic structures in silicon-on-insulator using complementary metal-oxide-seminconductor processing techniques, including deep ultraviolet lithography, was studied. It is concluded that this technology is capable of commercially manufacturing nanophotonic integrated circuits. The possibilities of photonic wires and photonic-crystal waveguides for photonic integration are compared. It is shown that, with similar fabrication techniques, photonic wires perform at least an order of magnitude better than photonic-crystal waveguides with respect to propagation losses. Measurements indicate propagation losses as low as 0.24 dB/mm for photonic wires but 7.5 dB/mm for photonic-crystal waveguides.