Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si.
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si.
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DOI：
10.1364/oe.26.014514
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发表时间：
2018-05
期刊：
影响因子：
3.8
通讯作者：
Si Zhu;B. Shi;Qiang Li;K. Lau
中科院分区：
文献类型：
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作者：
Si Zhu;B. Shi;Qiang Li;K. Lau
在互补金属氧化物半导体（CMOS）兼容的Si平台上，高质量InP的异质外延生长对于光电子学的单片集成是引人注目的。它将提供主流成熟的基于inp的光子集成电路（PIC）技术和大批量、低成本的硅基制造代工厂的综合实力。基于inp的激光二极管（ld）在硅上的直接单片集成有助于充分利用硅光子学的潜力，并有利于密集波分复用（DWDM）在电信中的应用。在这里，我们报道了第一个用金属有机化学气相沉积（MOCVD）直接在轴上v槽（001）Si上生长的InGaAs/InAlGaAs多量子阱（MQW）激光器。在室温脉冲电流注入下，首次实现了1.5 μm附近的激光，阈值电流密度Jth = 3.3 kA/cm2。在20°C-40°C范围内测得高特征温度T0为133 K。这些结果证明了采用这种大面积InP-on-Si衬底集成各种III-V型激光二极管、光电探测器以及高频和高速晶体管的潜力。
Hetero-epitaxial growth of high quality InP on a complementary metal-oxide-semiconductor (CMOS)-compatible Si platform is compelling for monolithic integration of optoelectronics. It will provide the combined strength of mainstream mature InP-based photonic integrated circuits (PIC) technologies and large-volume, low-cost silicon-based manufacturing foundries. Direct monolithic integration of InP-based laser diodes (LDs) on silicon helps fully exploit the potential of silicon photonics and benefits the application of dense wavelength division multiplexing (DWDM) for telecommunications. Here, we report the first InGaAs/InAlGaAs multi-quantum-well (MQW) lasers directly grown on on-axis V-grooved (001) Si by metalorganic chemical vapor deposition (MOCVD). Lasing near 1.5 μm was achieved for the first time with a threshold current density Jth = 3.3 kA/cm2 under pulsed current injection at room temperature. A high characteristic temperature T0 of 133 K in the range of 20°C-40°C was measured. These results demonstrate the potential of adopting this large-area InP-on-Si substrate for integrating diverse III-V laser diodes, photodetectors, and high-frequency and high-speed transistors.