A high power-handling RF MEMS tunable capacitor using quadruple series capacitor structure
A high power-handling RF MEMS tunable capacitor using quadruple series capacitor structure
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DOI：
10.1109/mwsym.2010.5518281
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发表时间：
2010-05
期刊：
影响因子：
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通讯作者：
H. Yamazaki;T. Ikehashi;Tomohiro Saito;E. Ogawa;Takayuki Masunaga;T. Ohguro;Y. Sugizaki;H. Shibata
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文献类型：
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作者：
H. Yamazaki;T. Ikehashi;Tomohiro Saito;E. Ogawa;Takayuki Masunaga;T. Ohguro;Y. Sugizaki;H. Shibata
本文提出了一种射频MEMS可调谐电容器，该电容器在较低的驱动电压下实现了优异的功率处理性能。可调谐电容器由两个固定的MIM（金属-绝缘体-金属）电容器和两个串联的MEMS电容器元件组成。这种四倍串联电容器（QSC）结构可以在不牺牲功率处理能力的情况下降低驱动电压，因为MIM电容器降低了施加在MEMS电容器上的射频电压幅值。测量结果显示，在85°C下，在21V的拉入电压下，可以实现+36dBm的热开关。
This paper presents an RF MEMS tunable capacitor that achieves an excellent power-handling property with relatively low actuation voltage. The tunable capacitor consists of two fixed MIM (Metal-Insulator-Metal) capacitors and two MEMS capacitor elements, all connected in series. This quadruple series capacitor (QSC) structure enables reduction of the actuation voltage without sacrificing the power-handling capability, since the MIM capacitor reduces the RF voltage amplitude applied to the MEMS capacitors. The measured result demonstrates +36dBm hot-switching at 85°C with 21V pull-in voltage.