Shallow acceptor resonant states in Si and Ge.
Shallow acceptor resonant states in Si and Ge.
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Si 和 Ge 中的浅受主共振态。
DOI：
10.1103/physrevb.45.5838
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Bassani
中科院分区：
文献类型：
--
作者：
Buczkó;Bassani
在有效质量近似下，利用全立方对称性并考虑了自旋轨道分裂带Γ~(7+)，计算了Si和Ge中浅受主的能谱和波函数。除了通常的束缚态外，还发现了共振态，它们与Γ7+带相连，但也包含Γ8+混合。计算了从基态到奇宇称态的光学跃迁的振子强度，并用束缚态和共振态对实验光谱进行了解释。对于Ge，我们的结果预测了与Γ7+分裂带有关的浅氢共振态的存在。
The energy spectrum and the wave functions of shallow acceptors in Si and Ge are computed within the effective-mass approximation using the full cubic symmetry and including the spin-orbit split-off band Γ 7+. In addition to the usual bound states, resonant states are found and distinguished from other states which lie in the continuum; they are connected with the Γ 7+ band, but also contain Γ 8+ mixing. The oscillator strengths of the optical transitions from the ground to the odd-parity states have been calculated, and an interpretation of the experimental spectra in terms of bound and resonant states is given for Si. For the case of Ge our results predict the existence of shallow hydrogenlike resonant states associated with the Γ 7+ split-off band.