Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy
Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy
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DOI：
10.1063/1.2716994
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发表时间：
2007-03-26
影响因子：
4
通讯作者：
Schaff, W. J.
中科院分区：
文献类型：
--
作者：
King, P. D. C.;Veal, T. D.;Schaff, W. J.
X射线光电子能谱测得纤锌矿-InN/AlN(0001)异质结的价带偏移为1.52+/-0.17 eV。与由此产生的4.0+/-0.2 eV的导带偏移量一起，在InN和AlN之间形成了跨越排列的I型异质结。(C)2007年美国物理研究所。
The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.