Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors
Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors
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DOI：
10.1063/1.2192637
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发表时间：
2006-04
影响因子：
4
通讯作者：
K. Miyaji;M. Saitoh;T. Hiramoto
中科院分区：
文献类型：
--
作者：
K. Miyaji;M. Saitoh;T. Hiramoto
通过实验和计算研究了室温（RT）工作的硅单孔晶体管（SHT）的负微分电导（NDC）特性的半峰全宽（FWHM）。结果发现，当 SHT 的电压增益较高时，可以获得更尖锐的 NDC 和更小的 FWHM。较低的漏极耦合被认为是 RT 操作 SHT 谐振隧道系统中 FWHM 小的主要原因。在 SHT 中获得了小至 95mV 的 NDC FWHM，RT 增益高达 5.2，这是迄今为止报道的增益的最高值。该器件采用超窄线沟道金属氧化物半导体场效应晶体管的形式，在室温下表现出大的库仑阻塞振荡，并且由于其超窄沟道结构而具有极小的漏极电容。 NDC现在可以通过器件参数进行设计，显示出在低压、低功耗NDC电路中应用的进一步潜力。
The full width at half maximum (FWHM) of the negative differential conductance (NDC) characteristics in room temperature (RT)-operating silicon single-hole transistors (SHTs) has been studied by experiments and calculations. It is found that when the voltage gain of the SHT is higher, sharper NDC and smaller FWHM are achieved. Lower drain coupling is considered to be the main reason for the small FWHM in a resonant tunneling system of RT-operating SHTs. FWHM of NDC of as small as 95mV has been obtained in a SHT with the gain of as high as 5.2 at RT, which is the highest value of the gain ever reported. The device is in the form of an ultranarrow wire channel metal oxide semiconductor field-effect transistor, which shows large Coulomb blockade oscillations at RT and has extremely small drain capacitance due to its ultranarrow channel structure. NDC can now be designed by device parameters, showing further potential for application to low-voltage, low-power NDC circuits.