Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
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DOI：
10.1103/physrevb.85.035320
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发表时间：
2012-01
影响因子：
3.7
通讯作者：
Y. Ando;K. Kasahara;S. Yamada;Y. Maeda;K. Masaki;Y. Hoshi;K. Sawano;M. Miyao;K. Hamaya
中科院分区：
文献类型：
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作者：
Y. Ando;K. Kasahara;S. Yamada;Y. Maeda;K. Masaki;Y. Hoshi;K. Sawano;M. Miyao;K. Hamaya
本文研究了在非简并硅沟道中利用三端Hanle效应测量得到的自旋积累信号的温度演化。我们发现自旋提取和自旋注入条件之间的温度依赖的自旋信号的明显差异。在具有低偏置电流的自旋注入条件下，尽管温度升高，自旋信号的幅度仍可以增强。对于温度相关的自旋信号的解释，重要的是要考虑的自旋检测的灵敏度在肖特基隧道势垒接触除了在Si中的自旋扩散。
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.