An all C60 vertical transistor for high frequency and high current density applications
An all C60 vertical transistor for high frequency and high current density applications
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DOI：
10.1063/1.4767391
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发表时间：
2012-11-19
影响因子：
4
通讯作者：
Luessem, Bjoern
中科院分区：
文献类型：
--
作者：
Fischer, Axel;Scholz, Reinhard;Luessem, Bjoern
我们提出了一种基于有机半导体C-60的高工作频率和高电流密度的垂直有机晶体管。在这种垂直有机电介质（VOT）中，可以容易地插入掺杂层以有效地降低接触电阻，而不需要额外的结构化。结合在高温下退火（150 ℃，2小时），我们实现了1A/cm（2）的电流密度在3V的驱动电压与30 ms的极高的峰值电流。晶体管保持1以上的电压增益高达1.5 MHz在一个简单的逆变器电路。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4767391]
We present a vertical organic transistor with high operating frequencies and high current densities based on the organic semiconductor C-60. In this vertical organic triode (VOT), doped layers can easily be inserted to efficiently reduce the contact resistance without the need for additional structuring. Combined with annealing at elevated temperatures (150 degrees C for 2 h), we achieve a current density of 1A/cm(2) at a driving voltage of 3V together with an extremely high transconductance of 30 mS. The transistor retains a voltage gain above 1 up to 1.5 MHz in a simple inverter circuit. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767391]