Domain wall creep in an Ising ultrathin magnetic film
Domain wall creep in an Ising ultrathin magnetic film
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DOI：
10.1103/physrevlett.80.849
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发表时间：
1998-01-26
影响因子：
8.6
通讯作者：
Le Doussal, P
中科院分区：
文献类型：
--
作者：
Lemerle, S;Ferre, J;Le Doussal, P
本文研究了具有垂直各向异性和淬灭无序的二维Pt/Co/Pt薄膜中磁畴壁在磁场H驱动下的运动。下至所谓蠕变状态的MDW速度测量显示，平均能量势垒标度为（1/H）（mu），其中mu = 0.24 +/- 0.04，并且沿着MDW的相关函数由漂移指数zeta = 0.69 +/- 0.07控制，与给出mu = 0.25和zeta = 2/3的理论非常一致。这是第一次直接测量的蠕变制度的移动界面在无序介质。
We have studied the motion of a magnetic domain wall (MDW) driven by a magnetic field H in a 2D ultrathin Pt/Co/Pt film showing perpendicular anisotropy and quenched disorder. MDW velocity measurements down to the so called creep regime show that the average energy barrier scales as (1/H)(mu) with mu = 0.24 +/- 0.04 and that the correlation function along a MDW is governed by a wandering exponent zeta = 0.69 +/- 0.07, in very good agreement with theories giving mu = 0.25 and zeta = 2/3. This is the first direct measurement of the creep regime for a moving interface in a disordered medium.