Conduction type control from n to p type for organic pigment films purified by reactive sublimation
Conduction type control from n to p type for organic pigment films purified by reactive sublimation
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DOI：
10.1063/1.360423
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发表时间：
1995-12
影响因子：
3.2
通讯作者：
M. Hiramoto;K. Ihara;Hiroyuki Fukusumi;M. Yokoyama
中科院分区：
文献类型：
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作者：
M. Hiramoto;K. Ihara;Hiroyuki Fukusumi;M. Yokoyama
研究了反应升华提纯和溴掺杂对n型perene颜料膜的费米能级和光伏性能的影响。在甲胺气氛下重复序列升华，使n-型perene颜料膜与Au肖特基结产生的光电压显著增加。这一现象是由于通过反应升华有效地去除未知但特定的杂质而导致费米能级负移所致。另一方面，通过溴掺杂，颜料薄膜的费米能级向正方向移动，并到达附近的价带，而肖特基结与Au的光电流方向相反。这一结果清楚地证明了导电类型从n型到p型的交替。这意味着有机半导体的pn控制是可能的。
The effects of purification by reactive sublimation technique and bromine doping on the Fermi level and the photovoltaic properties of n‐type perylene pigment films were investigated. Photovoltage arisen from the Schottky junction between n‐type perylene pigment film and Au increased significantly by repeating the train sublimation under methylamine gas atmosphere. This phenomenon was revealed to be due to the negative shift of the Fermi level resulting from the effective removal of unknown but specific impurity acting as an acceptor by reactive sublimation. On the other hand, by bromine doping, Fermi level of the pigment film shifted largely to a positive direction and reached the nearby valence band, while the direction of photocurrent flow arising from the Schottky junction with Au was reversed. This result is a clear demonstration of alternating the type of conduction from n type to p type. This means that the pn control of organic semiconductors is possible.