Critical review of CNTFET compact models
Critical review of CNTFET compact models
复制标题
CNTFET 紧凑模型的严格审查
DOI：
10.1007/s10825-014-0588-6
复制
发表时间：
2012
影响因子：
2.1
通讯作者：
M. Schroter
中科院分区：
文献类型：
--
作者：
M. Claus;D. Gross;M. Haferlach;M. Schroter
本文深入概述了基于波函数的模拟框架（称为 coos），用于通过求解有效质量薛定谔方程来建模弹道纳米管晶体管。该框架考虑了非抛物线电子能带结构效应、带间隧道效应以及用于扩展接触的类异质结模型，以描述电荷载流子注入和接收沟道。特别强调高效可靠的数值实现。通过将模拟结果与沿碳纳米管晶体管（cntfet）的实验数据进行比较，表明了模拟框架的适用性以及包括上述现象的必要性。预测并分析了较高漏源电压的固有渡越频率和输出特性。
This paper gives an in depth overview on a wave-function based simulation framework (calledcoos) for modeling ballistic nanotube transistors by solving the effective-mass Schrödinger equation. The framework considers non-parabolic electronic band structure effects, band-to-band tunneling as well as a heterojunction-like model for extended contacts to describe the injection and reception of charge carriers into and from the channel. Special emphasis is put on an efficient and reliable numerical implementation. The applicability of the simulation framework and the necessity to include the aforementioned phenomena are shown by comparing simulation results with experimental data of along carbon nanotube transistor (cntfet). The intrinsic transit frequencies and the output characteristics for higher drain-source voltages are predicted and analyzed.