The experimental analysis and the mechanical model for the debonding failure of TSV-Cu/Si interface
The experimental analysis and the mechanical model for the debonding failure of TSV-Cu/Si interface
复制标题
TSV-Cu/Si界面脱粘失效的实验分析及力学模型
DOI：
10.1016/j.microrel.2018.08.005
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发表时间：
2018-12-01
影响因子：
1.6
通讯作者：
An, Tong
中科院分区：
文献类型：
--
作者：
Chen, Si;Wang, Zhizhe;An, Tong
我们研究了硅通孔（TSV）-Cu/Si界面在425 ℃退火处理过程中的剥离失效。界面微观结构的特点是两个参数：TSV-Cu/Si界面粗糙度和Cu种子层晶粒尺寸。采用扫描电镜观察了TSV-Cu/Si界面的横截面，分析了界面微观结构对其微裂纹失效的影响。此外，定性的数值模拟进行调查的TSV-Cu/Si界面粗糙度和Cu种子层晶粒尺寸的TSV-Cu/Si界面裂纹的整体响应的效果。实验结果表明，退火后TSV界面裂纹大部分沿着Cu籽晶层扩展，且随着界面粗糙度和Cu籽晶层晶粒尺寸的增大，TSV-Cu/Si界面裂纹长度增加。通过数值模拟揭示了界面开裂的机理，结果表明，受界面粗糙度和Cu晶粒尺寸影响的Cu籽晶层应力集中是界面开裂的主要驱动力。基于实验和模拟结果，从TSV制造工艺的角度提出了控制TSV-Cu/Si界面开裂的指导方针。
We have investigated the debonding failure of the through-silicon via (TSV)-Cu/Si interface during annealing treatment at 425 degrees C. The interface microstructure was characterized by two parameters: the TSV-Cu/Si interface roughness and the Cu seed layer grain size. Scanning electron microscopy observation of the cross-section of the TSV-Cu/Si interface was performed to analyze the effect of the interface microstructure on its microcrack failure. In addition, qualitative numerical simulations were performed to investigate the effect of the TSV-Cu/Si interface roughness and Cu seed layer grain size on the overall response of the TSV-Cu/Si interface crack. The experimental results indicate that most of the TSV interfacial cracks propagate along the Cu seed layer after annealing, and the crack length of the TSV-Cu/Si interface increases with increasing interface roughness and Cu seed layer grain size. The numerical simulation is constructed to reveal the interfacial crack mechanism, and the results suggest that the stress concentration in the Cu seed layer which influence by interface roughness and Cu grains size is the main driving force for interfacial cracking. Based on the experimental and simulation results, guidelines for controlling the TSV-Cu/Si interfacial cracking from the perspective of the TSV manufacturing process are proposed.