New low reverse recovery charge (QRR) high-voltage silicon diodes provide higher efficiency than presently available ultrafast rectifiers
New low reverse recovery charge (QRR) high-voltage silicon diodes provide higher efficiency than presently available ultrafast rectifiers
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新型低反向恢复电荷 (QRR) 高压硅二极管比目前可用的超快整流器具有更高的效率
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
J. Jovalusky
中科院分区：
文献类型：
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作者：
J. Jovalusky
介绍了一种具有低反向恢复电荷(Qrr)和高软化系数的新一代600V硅整流器。新的整流器可以实现比任何其他可用的硅二极管更高的升压变换级效率。本文介绍了这种新型二极管的特性，并在几个应用电路中展示了它们的性能。观察和记录了相关的测量结果，如运行效率和部件温度，并给出了相应的测量结果。最后，描述了一些有用的技术，这些技术可以帮助优化CCM Boost转换器的操作，以便在使用低Qrr和高软化系数的二极管时最大限度地提高效率。
A new generation of 600 V, Silicon rectifiers that have low reverse recovery charge (Qrr) and a high Softness factor are described. The new rectifiers can realize higher boost converter stage efficiency than any other available silicon diodes. This paper presents the characteristics of the new diodes and shows their performance in several application circuits. Relevant measurements, such as operating efficiency and component temperatures were observed and recorded, and are presented. Lastly, some useful techniques are described, that may help optimize CCM boost converter operation in order to maximize efficiency, when using diodes that have low Qrr and a high softness factor.