Optical absorption and photocurrent enhancement in semi-insulating gallium arsenide by femtosecond laser pulse surface microstructuring.
Optical absorption and photocurrent enhancement in semi-insulating gallium arsenide by femtosecond laser pulse surface microstructuring.
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DOI：
10.1364/oe.22.011654
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发表时间：
2014-05
期刊：
影响因子：
3.8
通讯作者：
Zhengyang Zhao;Z. Song;W. Shi;Quan-Zhong Zhao
中科院分区：
文献类型：
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作者：
Zhengyang Zhao;Z. Song;W. Shi;Quan-Zhong Zhao
我们观察到飞秒激光脉冲对半绝缘砷化镓(SI-GaAs)的光吸收和光电流的增强作用。用波长为800 nm、脉宽为120ps的再生放大钛宝石激光对半绝缘砷化镓晶片进行处理。激光烧蚀产生了0.74μm的周期波纹，其光吸收边向更长的波长移动。同时，辐照后半绝缘砷化镓的稳定光电流提高了50%。用范德堡方法对样品的电学性质进行了标定。研究发现，飞秒激光烧蚀后，薄膜表面形成了微尺度的增透膜层，增强了薄膜的吸收和光电导性。
We observe an enhancement of optical absorption and photocurrent from semi-insulating gallium arsenide (SI-GaAs) irradiated by femtosecond laser pulses. The SI-GaAs wafer is treated by a regeneratively amplified Ti: Sapphire laser of 120 fs laser pulse at 800 nm wavelength. The laser ablation induced 0.74 μm periodic ripples, and its optical absorption-edge is shifted to a longer wavelength. Meanwhile, the steady photocurrent of irradiated SI-GaAs is found to enhance 50%. The electrical properties of samples are calibrated by van der Pauw method. It is found that femtosecond laser ablation causes a microscale anti-reflection coating surface which enhances the absorption and photoconductivity.