Metal-insulator transition with multiple micro-scaled avalanches in VO2 thin film on TiO2(001) substrates
Metal-insulator transition with multiple micro-scaled avalanches in VO2 thin film on TiO2(001) substrates
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DOI：
10.1063/1.4709429
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发表时间：
2012-04
影响因子：
4
通讯作者：
Kenichi Kawatani;H. Takami;T. Kanki;Hidekazu Tanaka
中科院分区：
文献类型：
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作者：
Kenichi Kawatani;H. Takami;T. Kanki;Hidekazu Tanaka
我们观察到在TiO2（001）衬底上的VO2薄膜中的微尺度相分离，并研究了金属畴的出现与相变附近的电阻突变之间的关系。电阻的变化解释使用组合电阻模型的两个阶段，从可视化的域行为评估的电导是一致的电子性质。这些结果表明使用部分相变空间地修改导电行为的重要性。
We observed micro-scale phase separation in VO2 thin films on TiO2(001) substrates and investigated the relationship between the appearance of metallic domains and the abrupt resistive changes around the phase transition. The resistive changes are interpreted using a combined resistance model of the two phases, and the conductance evaluated from the visualized domain behavior was consistent with the electronic properties. These results indicate the importance of modifying conductive behavior spatially using a partial phase transition.