Cu bump interconnections in 20 μm-pitch at low temperature utilizing electroless tin-plating on 3D stacked LSI
Cu bump interconnections in 20 μm-pitch at low temperature utilizing electroless tin-plating on 3D stacked LSI
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DOI：
10.1252/jcej.36.119
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发表时间：
2003-02
影响因子：
0.8
通讯作者：
Y. Tomita;T. Morifuji;M. Tomisaka;M. Sunohara;Y. Nemoto;Tomotoshi Sato;Kenji Takahashi;M. Bonkohara
中科院分区：
文献类型：
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作者：
Y. Tomita;T. Morifuji;M. Tomisaka;M. Sunohara;Y. Nemoto;Tomotoshi Sato;Kenji Takahashi;M. Bonkohara
铜表面化学镀锡具有较好的热压键合特性，但由于与铜的扩散，在键合处加热容易使镀层厚度减小。因此，在20 μm-pitch范围内，确定了较低预热的键合轮廓，以评价铜包覆薄锡帽的键合性，从而证实了在20 μm-pitch范围内实现互连的可能性。结合温度为150°C，结合力为24.5 n。最后，在T-COTE上进行了化学镀锡，并在垂直互连上评价了基本的结合条件。结果表明，铜电极通过硅晶片与相邻的铜凸块之间有充分的连接。
The electroless tin-plating on copper has the preferable characteristics for the thermal compression bonding, although it is easy to decrease in thickness by heating at the bonding because of the diffusion with copper. Therefore, the bonding profile was determined to have lower pre-heating to evaluate the bondability with copper-bumps dressed thin tin-caps in 20 μm-pitch- Then, the possibility of the interconnections in 20 μm-pitch was confirmed. Bonding temperature was 150°C and bonding force was 24.5 N. Finally, the tin-cap on a through-hole electrode (T-COTE) was performed in the electroless plating and the basic bonding condition was evaluated on the vertical interconnections. The results showed the sufficient joint between the copper electrodes through the Si die and the adjacent copper bumps on the interposer.