GaInAsP lateral current injection lasers on semi-insulating substrates
GaInAsP lateral current injection lasers on semi-insulating substrates
复制标题
半绝缘衬底上的 GaInAsP 横向电流注入激光器
DOI：
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发表时间：
1994
影响因子：
2.6
通讯作者：
C. Caneau
中科院分区：
文献类型：
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作者：
K. Oe;Y. Noguchi;C. Caneau
在半绝缘InP衬底上制备了GaInAsP横向电流注入激光器。该激光器具有良好的激光特性，阈值电流为10 mA，最大连续输出功率为10 mW，连续振荡高达70/spl deg/C，零偏压下的电容仅为0.5pF。这一性能首次表明，横向电流注入激光器是一种很有前途的OEIC光源候选光源。
GaInAsP lateral current injection lasers have been fabricated on semi-insulating InP substrates. The lasers exhibit good lasing characteristics such as 10 mA threshold current, 10 mW maximum cw output power, and cw oscillation up to 70/spl deg/C. The laser has very low capacitance of 0.5 pF at zero bias voltage. This performance shows, for the first time, that the lateral current injection laser is a promising candidate for OEIC light sources.<<ETX>>