Effect of laser fluence on c‐axis orientation of LiNbO3 piezoelectric films on nanocrystalline diamond by pulsed laser deposition
Effect of laser fluence on c‐axis orientation of LiNbO3 piezoelectric films on nanocrystalline diamond by pulsed laser deposition
复制标题
脉冲激光沉积纳米晶金刚石上激光注量对 LiNbO3 压电薄膜 c 轴取向的影响
DOI：
10.1002/crat.201100396
复制
发表时间：
2012
影响因子：
1.5
通讯作者：
Xinwei Shi
中科院分区：
文献类型：
--
作者：
Xinchang Wang;Sifang Tian;W. Man;Jianfeng Jia;Xinwei Shi
采用脉冲激光沉积法在具有SiO2缓冲层的纳米金刚石（NCD）/Si衬底上制备了完全c轴取向的LiNbO 3压电薄膜。采用溶胶-凝胶法在NCD/Si衬底上制备了非晶SiO2缓冲层。LiNbO 3薄膜的c轴取向和结晶度与激光能量密度密切相关，当激光能量密度为3.6 J/cm ~ 2时，薄膜的c轴取向和结晶度最佳，薄膜表面光滑，由大量均匀的晶粒组成。LiNbO 3薄膜的平均表面粗糙度约为6.7 nm。
Completely c‐axis oriented LiNbO3 piezoelectric films have been deposited on nanocrystalline diamond (NCD)/Si substrates with SiO2 buffer layer by pulsed laser deposition. The amorphous SiO2 buffer layer was formed on NCD/Si substrates by sol‐gel method. The c‐axis orientation and crystallinity of LiNbO3 films are strongly dependent on the laser fluence, and the laser fluence 3.6 J/cm2 is found to be the optimal value for the growth of oriented LiNbO3 film, which has a smooth surface with composed of a large mount of uniform grains. The average surface roughness of LiNbO3 films is about 6.7 nm.
表面声器件用金刚石涂层硅基铌酸锂薄膜的制备
DOI：
--
发表时间：
2003
期刊：
Diamond & Related Materials 12
影响因子：
--
作者：
F.Kokai;M.Ishihara et al.;小海 文夫;K.Kobayashi et al.;M.Shiraishi et al.;F.Kokai et al.;F.Kokai et al.;小海文夫;小海文夫;小海文夫;K.Kobayashi et al.;M.Shiraishi et al.;F.Kokai;F.Kokai;F.Kokai;F.Kokai et al.;A.Koshio et al.;A.Nakayama et al.;F.Kokai et al.;小海文夫;小塩 明;A.Koshino et al.;F.Kokai;A.Koshino;F.Kokai;Atsuko Nakayam et al.;Fumio Kokai et al.;Akira Koshio et al.;F.Kokai et al.;M.Ishihara et al.
通讯作者：
M.Ishihara et al.