Densely arrayed eight-wavelength semiconductor lasers fabricated by microarray selective epitaxy
Densely arrayed eight-wavelength semiconductor lasers fabricated by microarray selective epitaxy
复制标题
微阵列选择性外延制备密集阵列八波长半导体激光器
DOI：
10.1109/2944.788401
复制
发表时间：
1999
影响因子：
4.9
通讯作者：
M. Yamaguchi
中科院分区：
文献类型：
--
作者：
K. Kudo;Y. Furushima;T. Nakazaki;M. Yamaguchi
本文描述了一种新型外延生长技术，称为微阵列选择性外延（MASE），用于制造极小的集成光子器件。 MASE技术使得无需半导体蚀刻即可形成密集阵列（节距<10 /spl mu/m）多量子阱（MQW）波导以及控制每个波导的带隙能量成为可能。该技术被证明可用于制造八通道10-/spl mu/m-间距微阵列MQW结构，并且通过在90 nm范围内改变SiO/sub 2/掩模图案成功地控制每个通道的带隙波长。该技术还应用于制造密集阵列的八波长法布里-珀罗激光二极管。激光部分仅宽 70 pm，长 400 /spl mu/m。获得了八种不同的激光波长（每种波长超过 80 nm）、小于 9 mA 的均匀阈值电流以及超过 10 mW 的输出功率。
This paper describes a novel epitaxial growth technique, called microarray selective epitaxy (MASE), for fabricating extremely small integrated photonic devices. The MASE technique makes it possible to form densely arrayed (pitch <10 /spl mu/m) multiple-quantum-well (MQW) waveguides without semiconductor etching as well as to control the bandgap energy of each waveguide. The technique is demonstrated for fabricating an eight-channel 10-/spl mu/m-spacing microarray MQW structure, and the bandgap wavelength of each channel is successfully controlled by changing the SiO/sub 2/ mask pattern over a range of 90 nm. The technique is also applied to the fabrication of densely arrayed, eight-wavelength, Fabry-Perot laser diodes. The laser section is only 70 pm wide and 400 /spl mu/m long. Eight different lasing wavelengths (each over 80 nm), a uniform threshold current of less than 9 mA, and an output power of over 10 mW are obtained.