Self-aligned, Extremely High Frequency Iii−v Metal-oxide- Semiconductor Field-effect Transistors on Rigid and Flexible Substrates-猫眼课题宝

DOI：

发表时间：

期刊：

影响因子：

通讯作者：

中科院分区：

其他

文献类型：

作者：

Chuan Wang;Jun-Chau Chien;Hui Fang;K. Takei;J. Nah;E. Plis;S. Krishna;A. Niknejad;A. Javey-A.-Jav

本文报告了 InAs 纳米膜晶体管在机械刚性和柔性基板上的射频 (RF) 性能。我们采用自对准器件架构，通过使用 T 形栅极结构来制造沟道长度低至 75 nm 的高性能 InAs 金属氧化物半导体场效应晶体管 (MOSFET)。 RF 测量表明，在硅衬底上制造的 InAs 器件的截止频率 (ft) 约为 165 GHz，这是硅衬底上的 III−V MOSFET 取得的最佳结果之一。类似地，在可弯曲聚酰亚胺基板上制造的器件提供~105 GHz的f t ，代表了直接在机械柔性基板上制造的晶体管所实现的最佳性能。结果证明了 III−V 绝缘体平台在传统硅和柔性基板上用于极高频 (EHF) 电子器件的潜力。无线通信对更大带宽的需求不断增长，刺激了对能够以最快频率运行的晶体管的需求。除了传统的硅金属氧化物半导体场效应晶体管（MOSFET）之外，1各种类型的纳米材料系统（包括碳纳米管、2−7石墨烯、8−11和III−V纳米线12−14）已在射频（RF）应用中得到广泛探索。然而，这些材料平台尚未提供能够超越 III-V 高电子迁移率晶体管 (HEMT) 性能的晶体管。 15−20 对于 InP 衬底上的 30 nm 长器件，InAs 基 HEMT 的创纪录高截止频率 (ft) 已经达到 644 GHz。 17 尽管 III−V HEMT 研究取得了巨大成功，但该平台仍然存在一些固有的局限性。首先，需要复杂的外延生长来生长具有所需化学成分的多层，以形成量子阱结构。其次，由于使用外延工艺，衬底的选择仅限于昂贵的 III-V 体衬底，例如 InP 或 GaAs，或者在某些情况下，具有厚缓冲层的硅。第三，此类 HEMT 器件与柔性电子器件不兼容，而柔性电子器件最近引起了人们的极大兴趣。鉴于 III-V HEMT 面临的上述限制，我们之前报道了一种 III-V-on-insulator 或“XOI”方法，21 该方法能够使用简便的接触印刷工艺将超薄二维 III-V 膜转移到几乎任何类型的处理基板上。 22,23 使用超薄 III−V 薄膜可以实现最佳栅极控制，并为晶体管提供最小的短沟道效应，这对于小带隙半导体（例如……）尤其重要。

This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs devices made on a silicon substrate exhibit a cutoff frequency (f t) of ∼165 GHz, which is one of the best results achieved in III−V MOSFETs on silicon. Similarly, the devices fabricated on a bendable polyimide substrate provide a f t of ∼105 GHz, representing the best performance achieved for transistors fabricated directly on mechanically flexible substrates. The results demonstrate the potential of III−V-on-insulator platform for extremely high-frequency (EHF) electronics on both conventional silicon and flexible substrates. T he growing demand on larger bandwidth for wireless communications has stimulated the quest for transistors that can be operated at fastest possible frequencies. Besides the conventional silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), 1 various types of nanomaterial systems including carbon nanotubes, 2−7 graphene, 8−11 and III−V nanowires 12−14 have been heavily explored for radio frequency (RF) applications. However, none of these material platforms have yet offered transistors that can surpass the performance achieved in III−V high electron mobility transistors (HEMTs). 15−20 The record-high cutoff frequency (f t) for InAs-based HEMTs has already reached 644 GHz for 30 nm long devices on InP substrates. 17 Despite the tremendous success in III−V HEMT research, the platform still has a few inherent limitations. First of all, sophisticated epitaxial growth is needed to grow multiple layers with desired chemical compositions in order to form the quantum well structures. Second, due to the use of epitaxial processes, the selection of substrate is limited to expensive III−V bulk substrates such as InP or GaAs, or in some cases, silicon with thick buffer layers. Third, such HEMT devices are not compatible with flexible electronics, which has attracted significant amount of interest recently. In light of the above-described limitations faced by III−V HEMTs, we have previously reported a III−V-on-insulator, or " XOI " approach, 21 which enables the transfer of ultrathin, two-dimensional III−V membranes to virtually any type of handling substrate using a facile contact printing process. 22,23 The use of the ultrathin III−V membranes allows optimal gate control and offers transistors with minimal short channel effects, which is especially important for a small bandgap semiconductor such …

Self-aligned, Extremely High Frequency Iii−v Metal-oxide- Semiconductor Field-effect Transistors on Rigid and Flexible Substrates

文献摘要

被引文献

相似文献