Band-edge emission of undoped and doped ZnO single crystals at room temperature
Band-edge emission of undoped and doped ZnO single crystals at room temperature
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DOI：
10.1063/1.1450260
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发表时间：
2002-02
影响因子：
3.2
通讯作者：
N. Ohashi;T. Sekiguchi;K. Aoyama;T. Ohgaki;Y. Terada;I. Sakaguchi;T. Tsurumi;H. Haneda
中科院分区：
文献类型：
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作者：
N. Ohashi;T. Sekiguchi;K. Aoyama;T. Ohgaki;Y. Terada;I. Sakaguchi;T. Tsurumi;H. Haneda
通过测量在20-300K温度范围内阴极发光光谱随温度的变化，研究了氧化锌在室温附近的带边发射。用气相传输法生长的未掺杂晶体和熔剂法掺铝的晶体研究了掺杂对发光性能的影响。对于Al掺杂晶体，在T<；300K温度范围内自由激子发射很弱，最强的发射峰在能量上接近束缚激子湮没发射。另一方面，对于未掺杂的晶体，发现在室温下最强的发射峰出现在E≈，例如−60 meV处，该峰不能归属于自由激子湮没发射。研究还发现，这一峰值并不是排放效率下降的原因。
Band-edge emission of ZnO at around room temperature was investigated by measuring the temperature dependence of cathodoluminescence spectra at 20–300 K. Undoped crystals grown by a vapor transport method and Al-doped crystals by flux method were employed to elucidate the effect of doping on luminescence properties. For the Al-doped crystals, the free-exciton emission was weak through out the temperature range T<300 K. The most intense emission peak of the Al-doped crystal was energetically close to bound exciton annihilation emission. On the other hand, for undoped crystals, it was found that the most intense emission peak at room temperature was at E≈Eg−60 meV and this peak was not assignable to free-exciton annihilation emission. It was also found that this peak is not a reason for the reduction in emission efficiency.