In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon
In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon
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DOI：
10.1016/j.jallcom.2007.02.010
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发表时间：
2008-05-29
影响因子：
6.2
通讯作者：
Choi, Sung-Churl
中科院分区：
文献类型：
--
作者：
Lee, Jin-Seok;Byeun, Yun-Ki;Choi, Sung-Churl
本研究以含铁成分的低纯度SiO2和碳的混合物为原料，研究了粉料配比、温度、保温时间和气体流量等碳热工艺参数对SiC纳米线合理生长速率的影响。采用气-液-固（VLS）工艺，在1400℃、2 L/min氩气流速下生长SiC纳米线2 h，得到了直径约60 nm、长度约几百微米的高纯度产品。这是由于铁从低纯度的SiO2材料中迁移出来，形成了细小的富铁液滴，对SiC一维结构的结构起到了催化剂的作用。SiC纳米线的生长速率随着保温时间和气体流量的增加而增加，导致过饱和程度降低。(C) 2007 Elsevier B.V.版权所有
Carbothermal process parameters such as powder mixing ratio, temperature, holding time and gas flow rate, which affect on the reasonable growth rate of SiC nanowires were investigated using a mixture of low-purity SiO2 containing iron component and carbon in this study. SiC nanowires are being grown at 1400 degrees C for 2 h in an argon flow rate of 2 L/min by a vapor-liquid-solid (VLS) process, which produces a very high-purity product with about 60 nm and several hundreds of micrometers in diameter and length, respectively. This is attributed to the migration of the iron out of the low-purity SiO2 material as finely divided iron-rich droplets acting in the role of catalyst for the architecture of a SiC one-dimensional structure. The growth rate of SiC nanowires increased with increasing holding time and flow gas rate, inducing the supersaturation degree to become lower. (C) 2007 Elsevier B.V. All rights reserved.