Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors
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DOI：
10.1063/1.3432716
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发表时间：
2010-06
影响因子：
3.2
通讯作者：
Yong Xu;T. Minari;K. Tsukagoshi;J. Chroboczek;G. Ghibaudo
中科院分区：
文献类型：
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作者：
Yong Xu;T. Minari;K. Tsukagoshi;J. Chroboczek;G. Ghibaudo
有机场效应晶体管 (OFET) 受到电荷载流子迁移率低和存取电阻高等限制。直接、准确地评估这些量对于理解 OFET 特性至关重要。我们将 Y 函数方法 (YFM) 引入并五苯 OFET。这种方法使我们能够在不受接入或接触电阻影响的情况下评估低场迁移率。低场迁移率被证明比目前应用的场效应迁移率更适合 OFET 的性能评估。其独特的优点是直接抑制各个晶体管中的接触电阻影响，尽管与广泛接受的关于栅极电压的变量相比，这种接触电阻是一个常数。经过与传输线法的详细比较，YFM 被证明是一种快速、精确的接触电阻评估替代方法。同时，接触电阻如何影响有效移动...
Organic field-effect transistors (OFETs) suffer from limitations such as low mobility of charge carriers and high access resistance. Direct and accurate evaluation of these quantities becomes crucial for understanding the OFETs properties. We introduce the Y function method (YFM) to pentacene OFETs. This method allows us to evaluate the low-field mobility without the access or contact resistance influence. The low-field mobility is shown to be more appropriate than the currently applied field-effect mobility for the OFETs’ performance evaluation. Its unique advantage is to directly suppress the contact resistance influence in individual transistors, although such contact resistance is a constant as compared to the widely accepted variable one with respect to the gate voltage. After a comparison in detail with the transmission-line method, the YFM proved to be a fast and precise alternative method for the contact resistance evaluation. At the same time, how the contact resistance affects the effective mobi...