Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport
Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport
复制标题
在物理气相传输制备的块状 AlN 衬底上通过氢化物气相外延生长厚 AlN 层制备独立式 AlN 衬底
DOI：
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发表时间：
2012
影响因子：
2.3
通讯作者：
Zlatko Sitar
中科院分区：
文献类型：
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作者：
Yoshinao Kumagai;Yuki Kubota;Toru Nagashima;Toru Kinoshita;Rafael Dalmau;Raoul Schlesser;Baxter Moody;Jinqiao Xie;Hisashi Murakami;Akinori Koukitu;Zlatko Sitar
