High temperature ferromagnetism in GaAs-based heterostructures with Mn δ doping -: art. no. 017201
High temperature ferromagnetism in GaAs-based heterostructures with Mn δ doping -: art. no. 017201
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DOI：
10.1103/physrevlett.95.017201
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发表时间：
2005-07-01
影响因子：
8.6
通讯作者：
Tanaka, M
中科院分区：
文献类型：
--
作者：
Nazmul, AM;Amemiya, T;Tanaka, M
我们发现，适当设计由Mn δ掺杂GaAs和p型AlGaAs层组成的磁性半导体异质结构，其中Mn原子的局部高浓度磁矩与二维空穴气体波函数可控地重叠，实现了显着的高铁磁转变温度（T-C）。通过改变结构的生长顺序，补偿Mn间隙的显著减少，然后进行低温退火，导致高达250 K的高T-C。高T-C的异质结构表现出奇特的反常霍尔效应行为，其符号与温度有关。
We show that suitably designed magnetic semiconductor heterostructures consisting of Mn delta (delta)-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnetic moments of Mn atoms are controllably overlapped with the two-dimensional hole gas wave function, realized remarkably high ferromagnetic transition temperatures (T-C). A significant reduction of compensative Mn interstitials by varying the growth sequence of the structures followed by low-temperature annealing led to high T-C up to 250 K. The heterostructure with high T-C exhibited peculiar anomalous Hall effect behavior, whose sign depends on temperature.