One-dimensional, self-organized Si dots grown by pulsed laser melting of a-Si:H films
One-dimensional, self-organized Si dots grown by pulsed laser melting of a-Si:H films
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通过脉冲激光熔化 a-Si:H 薄膜生长的一维自组织硅点
DOI：
10.1016/s0022-3093(98)00345-7
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发表时间：
1998
影响因子：
3.5
通讯作者：
N. Ming
中科院分区：
文献类型：
--
作者：
Kunji Chen;G. Luo;Mingxiang Wang;Xiangzhu Gao;Jun Xu;Mu Wang;Xinfan Huang;N. Ming
报道了一种新的方法，通过脉冲激光诱导熔化a-Si：H薄膜，然后再生长一维，自组织，纳米尺寸的晶体硅（nc-Si）点的生长。用高能量KrF准分子激光器通过相移掩模光栅直接在样品上产生瞬态热网格，导致局部相变。生长了直径约为200 nm、高度约为20 nm的半球形nc-Si点，并沿光栅线沿着自组织生长。利用原子力显微镜和截面透射电子显微镜对纳米硅点的微观结构和结晶度进行了表征，并对纳米硅点的自组织生长机理进行了探讨。
We report a new method for one-dimensional, self-organized, nanometer-sized crystalline silicon (nc-Si) dots growth through pulsed laser-induced melting followed by regrowth of a-Si:H films. A transient thermal grid was generated by a high energy KrF excimer laser through a phase shifting mask grating directly on the samples, leading to local phase transitions. The hemispherically shaped nc-Si dots with sizes of ∼200 nm in diameter and ∼20 nm in height were grown and self-organized along the lines of the grating. The microstructures and crystallinity of the nc-Si dots were determined using atomic force microscope images and cross-section transmission electron microscope photographs; and the growth mechanism of self-organized nc-Si dots is also discussed.