Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation

Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation
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使用质子微探针辐照测试的逆行电荷收集控制

DOI：
10.1143/jjap.32.6287
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
Mikio Takai Mikio Takai
Mikio Takai Mikio Takai
中科院分区：
--
文献类型：
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作者：
H. Sayama;H. Kimura;Y. Ohno;S. Satoh;K. Sonoda;N. Kotani;Mikio Takai Mikio Takai

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软错误减少高能离子注入层已经研究了新的评价技术，使用高能质子微探针。通过160和700 keV的硼离子注入形成的倒阱可以完全抑制由质子微探针在400 keV引起的软错误。质子感生电流揭示了逆行阱结构的电荷收集效率。在软错误映射中，反向阱收集的电荷被证明低于所测量的DRAM（动态随机存取存储器）的临界电荷。互补使用的软etror映射和离子感生电流测量可以澄清对软错误免疫的良好结构。
Soft error reduction by high-energy ion-implanted layers has been investigated by novel evaluation techniques using high-energy proton microprobes. A retrograde well formed by 160 and 700 keV boron ion implantation could completely suppress soft errors induced by the proton microprobes at 400 keV. The proton-induced current revealed the charge collection efficiency for the retrograde well structure. The collected charge for the retrograde well in the soft-error mapping was proved to be lower than the critical charge of the measured DRAMs (dynamic random-access memories). Complementary use of soft-etror mapping and ion-induced-current measurement could clarify well structures immune against soft errors.