Boron penetration studies from p+ polycrystalline Si through HfSixOy
Boron penetration studies from p+ polycrystalline Si through HfSixOy
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从 p 多晶硅到 HfSixOy 的硼渗透研究
DOI：
10.1063/1.1498872
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发表时间：
2002
影响因子：
4
通讯作者：
L. Colombo
中科院分区：
文献类型：
--
作者：
M. Quevedo;M. El;M. J. Kim;B. Gnade;R. Wallace;M. Visokay;A. Li;M. Bevan;L. Colombo
我们详细地研究了B掺杂多晶硅通过交替栅电介质候选HfSixOy薄膜的B穿透。在950 °C后的20 S时间内，未观察到B的穿透现象。当温度高于950 °C时，在硅衬底中观察到大量的B掺杂。通过模拟B的深度分布，我们计算出B在HfSixOy中的扩散系数高于SiO_2的相应扩散系数。在HfSixOy晶化后，B在晶界的扩散被认为是导致观察到的B扩散系数增加的原因。
We present detailed B penetration studies from B-doped polysilicon through alternate gate dielectric candidate HfSixOy films. No detectible B penetration is observed for annealing times as long as 20 s after 950 °C. Considerable B incorporation into the Si substrate is observed for annealing temperatures higher than 950 °C. By modeling the B depth profiles, we calculated the B diffusivities through HfSixOy to be higher than the corresponding diffusivities for SiO2. B diffusion through grain boundaries after HfSixOy crystallization is proposed to be responsible for the enhanced B diffusivity observed.