Avalanche multiplication characteristics of Al/sub 0.8/Ga/sub 0.2/As diodes
Avalanche multiplication characteristics of Al/sub 0.8/Ga/sub 0.2/As diodes
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Al/sub 0.8/Ga/sub 0.2/As 二极管的雪崩倍增特性
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
G. Hill
中科院分区：
文献类型：
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作者：
B. K. Ng;J. David;S. Plimmer;G. Rees;R. C. Tozer;M. Hopkinson;G. Hill
Al/sub 0.8/Ga/sub 0.2/As 的雪崩倍增特性已在 i 区宽度 w 从 1 /spl mu/m 至 0.025 /spl mu/m 变化的一系列 p-i-n 和 n-i-p 二极管中进行了研究。在整个研究的电场范围内，电子电离系数 /spl alpha/ 始终高于空穴电离系数 /spl beta/。通过与 Al/sub x/Ga/sub 1-x/As (x/spl les/0.6) 对比，观察到非常薄的 Al/sub 0.8/Ga/sub 0.2/As 二极管 (w=0.025 /spl mu/m) 的电子和空穴引发倍增特性之间的显着差异。发现 w/spl les/0.1 /spl mu/m 的二极管中的死区效应可将低偏压下的倍增降低到低于体电离系数预测值。与w无关的有效/spl alpha/和/spl beta/是从测量中推导出来的，并且能够准确地再现具有w/spl ges/0.1/spl mu/m的二极管的倍增特性以及所有二极管的击穿电压，具有良好的精度。通过对死区进行简单的校正，还可以以合理的精度预测更薄的二极管的倍增特性。
The avalanche multiplication characteristics of Al/sub 0.8/Ga/sub 0.2/As have been investigated in a series of p-i-n and n-i-p diodes with i-region widths, w, varying from 1 /spl mu/m to 0.025 /spl mu/m. The electron ionization coefficient, /spl alpha/, is found to be consistently higher than the hole ionization coefficient, /spl beta/, over the entire range of electric fields investigated. By contrast with Al/sub x/Ga/sub 1-x/As (x/spl les/0.6) a significant difference between the electron and hole initiated multiplication characteristics of very thin Al/sub 0.8/Ga/sub 0.2/As diodes (w=0.025 /spl mu/m) was observed. Dead space effects in the diodes with w/spl les/0.1 /spl mu/m were found to reduce the multiplication at low bias below the values predicted from bulk ionization coefficients. Effective /spl alpha/ and /spl beta/ that are independent of w have been deduced from measurements and are able to reproduce accurately the multiplication characteristics of diodes with w/spl ges/0.1 /spl mu/m and breakdown voltages of all diodes with good accuracy. By performing a simple correction for the dead space, the multiplication characteristics of even thinner diodes were also predicted with reasonable accuracy.