Stability of strain in Si layers formed on SiGe/Si(110) heterostructures
Stability of strain in Si layers formed on SiGe/Si(110) heterostructures
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SiGe/Si(110) 异质结构上形成的 Si 层的应变稳定性
DOI：
10.1088/1361-6641/aaeb10
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发表时间：
2018
影响因子：
1.9
通讯作者：
Nakagawa Kiyokazu
中科院分区：
文献类型：
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作者：
Arimoto Keisuke;Onogawa Atsushi;Saito Shingo;Yamada Takane;Sato Kei;Utsuyama Naoto;Sano Yuichi;Izumi Daisuke;Yamanaka Junji;Hara Kosuke O;Sawano Kentarou;Nakagawa Kiyokazu
生长在Si（110）衬底上的应变Si/弛豫SiGe异质结构作为基于高空穴迁移率Si晶片的电子器件的平台是有吸引力的。应变Si的厚度对器件的性能有影响，因为Si/SiGe界面处的状态和沟道区中扩散的Ge原子的密度的影响可以通过增加应变Si的厚度来抑制。利用偏振显微拉曼光谱研究了Ge组分约为30%的SiGe/Si（110）异质结构上固体源分子束外延（MBE）生长应变Si薄膜的临界层厚。应变硅层的生长的表面形貌的演变也研究了使用原子力显微镜。结果表明，采用固体源分子束外延方法可以在Si0.7Ge0.3/Si（110）异质结构上形成厚度接近70 nm的光滑、各向异性应变的Si薄膜。
Strained Si/relaxed SiGe heterostructures grown on Si (110) substrates are attractive as a platform for high-hole-mobility Si-wafer-based electronic devices. The thickness of the strained Si has an impact on the performances of devices since the influence of the states at the Si/SiGe interface and the density of the diffused Ge atoms in the channel region can be suppressed by increasing the strained Si thickness. In this study, the critical layer thickness of a solid-source molecular beam epitaxy (MBE) grown strained Si film on a SiGe/Si (110) heterostructure with a Ge composition of about 30% was investigated by using polarized micro-Raman spectroscopy. Evolution of the surface morphology with the growth of the strained Si layer was also studied using atomic force microscopy. As a result, it is concluded that a nearly 70 nm thick smooth and anisotropically strained Si film can be formed on a Si 0.7 Ge 0.3/Si (110) heterostructure by using the solid-source MBE method.