Optical mixing with difference frequencies to 552 GHz in ultrafast high electron mobility transistors
Optical mixing with difference frequencies to 552 GHz in ultrafast high electron mobility transistors
复制标题
超快高电子迁移率晶体管中高达 552 GHz 的不同频率的光学混合
DOI：
10.1109/68.853534
复制
发表时间：
2000
影响因子：
2.6
通讯作者：
G. Boll
中科院分区：
文献类型：
--
作者：
M.E. Ali;K. S. Ramesh;H. Fetterman;M. Matloubian;G. Boll
三端器件中的光混频技术首次扩展到亚毫米波频率。使用新一代的50纳米栅极InP基高电子迁移率晶体管（HEMT），光混合信号检测到552 GHz的信噪比约为5 dB。一种新的谐波三波混频方案被用于检测的光产生的信号。该技术涉及下变频的信号在设备中的栅极注入毫米波本地振荡器的第二谐波。还在212 GHz和382 GHz下进行了测量，以估计绝对信号强度和转换损耗。最后，新的有趣的功能，在偏置依赖的光混合信号的报告。
The technology of optical mixing in three-terminal devices has been extended, for the first time, to submillimeter-wave frequencies. Using a new generation of 50-nm gate InP-based high electron mobility transistors (HEMT's), optically mixed signals were detected to 552 GHz with a signal-to-noise ratio of approximately 5 dB. A novel harmonic three-wave mixing scheme was used for the detection of the optically generated signals. The technique involved downconversion of the signal in the device by the second harmonic of a gate-injected millimeter-wave local oscillator. Measurements were also done at 212 and 382 GHz to estimate the absolute signal strength and conversion losses. Finally, new interesting features in the bias dependence of the optically mixed signal are reported.