Interface and nanostructure evolution of cobalt germanides on Ge(001)
Interface and nanostructure evolution of cobalt germanides on Ge(001)
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DOI：
10.1063/1.4865955
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发表时间：
2014-02
影响因子：
3.2
通讯作者：
T. Grzela;W. Koczorowski;G. Capellini;R. Czajka;M. Radny;N. Curson;S. R. Schofield;M. Schubert;T. Schroeder
中科院分区：
文献类型：
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作者：
T. Grzela;W. Koczorowski;G. Capellini;R. Czajka;M. Radny;N. Curson;S. R. Schofield;M. Schubert;T. Schroeder
锗化钴 (CoxGey) 是未来硅基微电子和纳米电子器件中低电阻接触模块的候选系统。在本文中，我们对室温金属沉积和随后的退火条件下 Ge(001) 上 CoxGey 的形成进行了详细的结构、形态和成分研究。扫描隧道显微镜和低能电子衍射清楚地表明，室温下在 Ge(001) 上沉积大约四个单层 Co 会导致 Volmer Weber 生长模式，而随后的热退火会导致 Co-germanide 连续润湿层的形成，该润湿层逐渐向细长 CoxGey 纳米结构的生长演化。观察到两种类型的 CoxGey 纳米结构，即平顶型和脊型，并对它们随温度变化的演化进行了系统研究。额外的透射电子显微镜和 X 射线光电子能谱测量使我们能够监测...
Cobalt germanide (CoxGey) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on CoxGey formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated CoxGey nanostructures. Two types of CoxGey nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between ...