Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar+ ion irradiation
Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar+ ion irradiation
复制标题
交替氯吸附和Ar+离子辐照对Si的自限层刻蚀
DOI：
10.1063/1.110340
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发表时间：
1993
影响因子：
4
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
T. Matsuura;J. Murota;Y. Sawada;T. Ohmi
我们报告了使用超净电子回旋共振等离子体装置通过交替的氯吸附和低能Ar+离子照射对Si的自限制逐层蚀刻的观察。每次循环的腐蚀速率随氯气供应时间增加而增加，并且对于Si（100）饱和到每次循环约1/2原子层的恒定值，对于Si（111）饱和到每次循环约1/3原子层的恒定值，其在1.3- 6.7mPa的范围内与氯气分压无关。这些结果表明，蚀刻是由氯的自限吸附决定的。此外，发现氯吸附速率由Langmuir型方程描述，其中吸附速率常数k对于Si（100）和Si（111）分别为83和110（Pa·s）-1。
We report the observation of self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and low energy Ar+ ion irradiation using an ultraclean electron‐cyclotron‐resonance plasma apparatus. The etch rate per cycle increased with the chlorine supplying time and saturated to a constant value of about 1/2 atomic layer per cycle for Si(100) and 1/3 for Si(111), which was independent of the chlorine partial pressure in the range of 1.3–6.7 mPa. These results indicate that etching was determined by self‐limited adsorption of chlorine. Moreover, the chlorine adsorption rate was found to be described by a Langmuir‐type equation with an adsorption rate constant k=83 and 110 (Pa s)−1 for Si(100) and Si(111), respectively.