Sol–gel synthesis and transport property of nanocrystalline La2Mo2O9 thin films
Sol–gel synthesis and transport property of nanocrystalline La2Mo2O9 thin films
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DOI：
10.1007/s10971-008-1824-y
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发表时间：
2008-08
影响因子：
2.5
通讯作者：
Z. Zhuang;X. P. Wang;A. Sun;Yang Li;Q. Fang
中科院分区：
文献类型：
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作者：
Z. Zhuang;X. P. Wang;A. Sun;Yang Li;Q. Fang
以La（NO3）3和（NH4）6Mo7O24为前驱物，采用改进的溶胶-凝胶法在Si（100）和Poly-Al2O3衬底上成功制备了La2Mo2O9薄膜。当退火温度高于500 ° C时，XRD分析表明样品为纯La2Mo2O9相。TEM的能量色散谱（EDS）显示La与Mo的摩尔比接近1：1。场发射扫描电镜表征表明，薄膜致密、无裂纹、均匀。薄膜的晶粒尺寸在30~400 nm之间，这取决于煅烧温度和持续时间。从AFM形貌计算的粗糙度在10和35 nm之间的范围内变化。对于单层膜，膜的厚度大于200 nm。在600 ° C下，薄膜的电导率达到0.06 S/cm，比相应的块体材料高出近一个数量级。
La2Mo2O9films were successfully synthesized on silicon (100) and poly-alumina substrates via modified sol–gel method with inorganic salts of La(NO3)3and (NH4)6Mo7O24as precursors. Pure La2Mo2O9phase was confirmed by XRD if the annealing temperature was higher than 500 °C. Energy dispersive spectrometry (EDS) of TEM revealed that the molar ratio of La to Mo was nearly 1:1. Field-emission SEM characterization showed that the films were dense, crack-free and uniform. The grain size of the films ranged from 30 to 400 nm depending upon the calcination temperature and duration time. The roughness calculated from AFM topography varied in the range between 10 and 35 nm. The thickness of the films was more than 200 nm for single-layered films. The electrical conductivity of the films reaches 0.06 S/cm at 600 °C that was almost more than one order of magnitude higher than that of the corresponding bulk material.