High-Power High-Responsivity Modified Uni-Traveling-Carrier Photodiode Used as V-Band Optoelectronic Mixers
High-Power High-Responsivity Modified Uni-Traveling-Carrier Photodiode Used as V-Band Optoelectronic Mixers
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用作 V 波段光电混频器的高功率高响应度改进单行载流子光电二极管
DOI：
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发表时间：
2010
影响因子：
4.7
通讯作者：
J. Campbell
中科院分区：
文献类型：
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作者：
H. Pan;Zhi Li;J. Campbell
介绍了一种改进型单行载流子光电二极管V波段光电混频器。可以优化相对光本地振荡器(LO)和光中频(IF)信号电平和反向偏置，以实现最大上转换功率。结果表明，对于所有光电流水平，最佳光学中频相对于总入射光功率的百分比约为1/3，而最佳反向偏置随光电流呈线性增加。建立了一个简单的分析模型来解释这些观测结果。在60 GHz和70 mA的光电流下，获得了-4.7 dBm的高上转换功率。最大上转换功率主要受光电二极管饱和特性的限制。
A modified uni-traveling-carrier photodiode-based V-band optoelectronic mixer is demonstrated. The relative optical local oscillator (LO) and optical intermediate frequency (IF) signal levels and the reverse bias can be optimized for maximum up-converted power. It was found that the optimum optical IF percentage relative to the total incident optical power was approximately 1/3 for all photocurrent levels while the optimum reverse bias increased linearly with photocurrent. A simple analytical model that explains these observations is developed. A high up-converted power of -4.7 dBm was achieved at 60 GHz and photocurrent of 70 mA. The maximum up-converted power is primarily limited by the saturation characteristic of the photodiode.