Temperature induced modification of the mid-infrared response of single-walled carbon nanotubes
Temperature induced modification of the mid-infrared response of single-walled carbon nanotubes
复制标题
单壁碳纳米管中红外响应的温度诱导改性
DOI：
10.1063/1.4943499
复制
发表时间：
2016
影响因子：
3.2
通讯作者：
M. Kafesaki
中科院分区：
文献类型：
--
作者：
M. Shuba;A. Paddubskaya;P. Kuzhir;S. Maksimenko;G. Valušis;N. Poklonski;S. Bellucci;G. Kenanakis;M. Kafesaki
在红外范围（700-6200 cm-1）内研究了自支撑单壁碳纳米管（SWCNT）薄膜吸收光谱的温度依赖性，同时将空气从300 K加热到575 K。红外吸收光谱中观察到的温度变化可以用两种不同的物理因素来解释。第一个是p型掺杂的半导体单壁碳纳米管的电导率的强温度依赖性。第二个是金属单壁碳纳米管带内电子跃迁的电子弛豫时间随温度的变化关系。分离的贡献的带间和带内跃迁的单壁碳纳米管薄膜的红外光谱的可能性已被证明。
The temperature dependences of the absorbance spectra of thin free-standing single-walled carbon nanotube (SWCNT) films were studied in the infrared range (700–6200 cm−1) while heating the air from 300 to 575 K. The observed temperature variation in the infrared absorbance spectra has been explained by two different physical factors. The first one is the strong temperature dependence of the conductivity of p-type doped semiconducting SWCNTs. The second one is the temperature dependence of electron relaxation time of intraband electron transitions in metallic SWCNTs. The possibility of the separation of contributions from the interband and intraband transitions to the infrared spectra of SWCNT films has been demonstrated.