Temperature-resistance sensor arrays for combinatorial study of phase transitions in shape memory alloys and metallic glasses
Temperature-resistance sensor arrays for combinatorial study of phase transitions in shape memory alloys and metallic glasses
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DOI：
10.1016/j.scriptamat.2019.04.027
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发表时间：
2019-07
影响因子：
6
通讯作者：
Juanjuan Zheng;Haitao Zhang;Y. Miao;Shi Chen;J. Vlassak
中科院分区：
文献类型：
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作者：
Juanjuan Zheng;Haitao Zhang;Y. Miao;Shi Chen;J. Vlassak
我们已经开发了传感器阵列，使用简单而廉价的制造工艺来测量薄膜材料的电阻作为温度和成分的函数。传感器能够表征从液氮温度到约900 K的材料，并且不受低样品电导率的限制。通过分析Ti-Ni-Cu形状记忆合金和PdSi基金属玻璃中的相演变，我们证明了该技术的灵敏度和准确性。对于后者，我们发现，在结晶电阻的变化与玻璃形成能力。这一观察结果可用于使用高通量技术鉴定良好的玻璃形成剂。
We have developed sensor arrays using a simple and inexpensive fabrication process to measure the electrical resistance of thin-film materials as a function of temperature and composition. The sensors are capable of characterizing materials from liquid‑nitrogen temperature to approximately 900 K and are not limited by low sample conductivity. We demonstrate the sensitivity and accuracy of the technique by analyzing the phase evolution in Ti-Ni-Cu shape memory alloys and PdSi-based metallic glasses. For the latter, we find that the change in resistance on crystallization correlates with glass-forming ability. This observation may be useful in identifying good glass formers using high-throughput techniques.