Controlling transistor threshold voltages using molecular dipoles
Controlling transistor threshold voltages using molecular dipoles
复制标题
使用分子偶极子控制晶体管阈值电压
DOI：
10.1063/1.3091290
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Avik W. Ghosh
中科院分区：
文献类型：
--
作者：
S. Vasudevan;N. Kapur;T. He;M. Neurock;J. Tour;Avik W. Ghosh
我们开发了一个理论模型，说明有机分子如何控制其表面化学键合的晶体管通道的电子和输运特性。这种影响来自于由分子头基引起的远程偶极静电，以及由分子骨架和重构的半导体表面原子之间的平衡带对准驱动的短程电荷转移和界面偶极子。
We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipolar electrostatics due to the molecular head-groups, as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band-alignment between the molecular backbone and the reconstructed semiconductor surface atoms.