Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN.
Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN.
复制标题
在图案化非极性 GaN 上生长的 InGaN 单片多色发射。
DOI：
10.1038/s41598-018-37575-7
复制
发表时间：
2019
影响因子：
4.6
通讯作者：
Gong Y
中科院分区：
文献类型：
--
作者：
Gong Y
我们开发了一种新颖的过度生长方法，以创建仅由非极性和半极性 GaN 面组成的多面结构，而不涉及任何 c 面，从而消除了利用 c 面 GaN 生长 III 族氮化物光电子器件的主要缺点。这种多面结构可以通过在蓝宝石平面上的非极性GaN微棒阵列上过度生长来实现。然后在多面模板上生长 InGaN 多量子阱 (MQW)。由于在非极性和半极性 GaN 面上掺入铟的效率不同，因此获得了多种颜色的 InGaN/GaN MQW。光致发光（PL）测量表明，只需通过控制过度生长条件即可实现不同波长发射的可调强度比的多色发射。详细的阴极发光测量和与激发功率相关的 PL 测量已经完成，进一步验证了采用多面模板生长多种颜色 InGaN/GaN MQW 的方法。值得强调的是，该方法可能为未来单片无磷白光发射器的发展铺平道路。
A novel overgrowth approach has been developed in order to create a multiple-facet structure consisting ofonly non-polar and semi-polar GaN facets without involving any c-plane facets,allowing the major drawbacks of utilising c-plane GaN for the growth of III-nitride optoelectronics to be eliminated. Such a multiple-facet structure can be achieved by means of overgrowth on non-polar GaN micro-rod arrays onr-plane sapphire. InGaN multiple quantum wells (MQWs) are then grown on the multiple-facet templates. Due to the different efficiencies of indium incorporation on non-polar and semi-polar GaN facets, multiple-colour InGaN/GaN MQWs have been obtained. Photoluminescence (PL) measurements have demonstrated that the multiple-colour emissions with a tunable intensity ratio of different wavelength emissions can be achieved simply through controlling the overgrowth conditions. Detailed cathodoluminescence measurements and excitation-power dependent PL measurements have been performed, further validating the approach of employing the multiple facet templates for the growth of multiple colour InGaN/GaN MQWs. It is worth highlighting that the approach potentially paves the way for the growth of monolithic phosphor-free white emitters in the future.