High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy
High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy
复制标题
化学束外延生长的高速 InP/InGaAsP/InGaAs 雪崩光电二极管
DOI：
10.1109/3.151
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发表时间：
1988
影响因子：
2.5
通讯作者：
B. Johnson
中科院分区：
文献类型：
--
作者：
J. Campbell;W. Tsang;G. Qua;B. Johnson
High-performance InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical beam epitaxy are described. These APDs exhibit low dark current (less than 50 nA at 90% of breakdown), good external quantum efficiency (greater than 90% at a wavelength of 1.3 mu m), and high avalanche gain ( approximately=40). In the low-gain regime, bandwidths as high as 8 GHz have been achieved. At higher gains, a gain-bandwidth-limited response is observed; the gain-bandwidth product is 70 GHz. >
