Hydrogen in crystalline silicon: A deep donor?
Hydrogen in crystalline silicon: A deep donor?
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晶体硅中的氢：深层供体？
DOI：
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发表时间：
1987
期刊：
影响因子：
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通讯作者：
A. Mittiga
中科院分区：
文献类型：
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作者：
M. Capizzi;A. Mittiga
对硼掺杂硅中氢浓度谱图的二次离子质谱分析表明，在本禀物质的费米能级以上约0.1 eV的深层供体氢态。该理论模型考虑了中性和电离氢的扩散，后者通过与氢掺杂梯度相关的内置电场增强。两种扩散过程的活化能分别为~ 1.2和~ 0.8 eV。先前报道的低温和高温结果之间的差异被取消。
An analysis of the hydrogen concentration profiles obtained from secondary ion mass spectrometry in boron‐doped silicon points to a deep donor hydrogen state located ∼0.1 eV above the Fermi level for intrinsic material. The theoretical model takes into account both neutral and ionized hydrogen diffusion, the latter enhanced by a built‐in electric field associated with the hydrogen doping gradient. The activation energies for the two diffusion processes are ∼1.2 and ∼0.8 eV, respectively. A formerly reported discrepancy between low‐ and high‐temperature results is lifted.