Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions
Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions
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DOI：
10.1109/led.2003.822659
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发表时间：
2004-02-01
影响因子：
4.9
通讯作者：
Park, SJ
中科院分区：
文献类型：
--
作者：
Huh, C;Schaff, WJ;Park, SJ
研究了InGaN/GaN多量子阱（MQW）发光二极管（LED）中不同铟组分的温度特性。随着多量子阱中In组分的增加，由于多量子阱中In组分波动引起的局域能态的增加，LED在室温下的光学性能增加。然而，随着温度的升高，多量子阱中具有较高In组分的LED的输出功率的降低高于多量子阱中具有较低In组分的LED的输出功率的降低。这可能是由于InGaN阱和GaN势垒之间的应变积累增加导致多量子阱中的高缺陷密度增加了非辐射复合。
The temperature dependence of performance of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different indium compositions in the MQWs was investigated. With increasing In composition in the MQWs, the optical performance of the LEDs at room temperature was increased due to an increase in the localized energy states caused by In composition fluctuations in MQWs. As the temperature was increased, however, the decrease in output power for LED with a higher In composition in the MQWs was higher than that of LED with a lower In composition in the MQWs. This could be due to the increased nonradiation recombination through the high defect densities in the MQWs resulted from the increased accumulation of strain between InGaN well and GaN barrier.