A silicon carbide room-temperature single-photon source
A silicon carbide room-temperature single-photon source
复制标题
DOI：
10.1038/nmat3806
复制
发表时间：
2014-02-01
期刊：
影响因子：
41.2
通讯作者：
Ohshima, T.
中科院分区：
文献类型：
--
作者：
Castelletto, S.;Johnson, B. C.;Ohshima, T.
在过去的几年里，已经在许多系统中实现了单光子产生：单分子(1)、量子点(2-4)、钻石颜色中心5和其他(6)。单光子的产生和探测在量子力学(7)和测量理论(8)的实验基础中起着核心作用。实现量子密钥分发、量子中继器和光子量子信息处理需要高效、高质量的单光子源(9)。在这里，我们报告了在器件友好型材料碳化硅(SIC)中超亮、室温、光稳定的单光子源的鉴定和形成。这种源是由一种被称为碳反位-空位对的本征缺陷组成的，这种缺陷是由经过精心优化的电子辐照和超纯碳化硅的退火所产生的。由于偏振规律，获得了极高的亮度(2×10(6)计S(-1))，并且在不使用腔或等离子体结构的情况下，整体获得了高的量子效率。这可能会使未来的集成量子光子器件受益(9)。
Over the past few years, single-photon generation has been realized in numerous systems: single molecules(1), quantum dots(2-4), diamond colour centres5 and others(6). The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics(7) and measurement theory(8). An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing(9). Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2 x 10(6) counts s(-1)) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices(9).