Synthesis and ambipolar transistor properties of tungsten diselenide nanotubes
Synthesis and ambipolar transistor properties of tungsten diselenide nanotubes
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DOI：
10.1063/5.0005314
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发表时间：
2020-05
影响因子：
4
通讯作者：
Yohei Yomogida;Yoshiki Kainuma;T. Endo;Y. Miyata;K. Yanagi
中科院分区：
文献类型：
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作者：
Yohei Yomogida;Yoshiki Kainuma;T. Endo;Y. Miyata;K. Yanagi
近年来，过渡金属二硫属化合物纳米管的电学性能研究受到了广泛关注。有各种类型的无机纳米管具有不同的金属和硫族元素原子，可以提供各种电性能;然而，其电性能被揭示的无机纳米管大多限于WS 2纳米管。在这里，我们研究了另一种类型的无机纳米管，即，WSe 2纳米管的电性能，并通过开发一种简便的合成方法揭示了它们的双极晶体管特性。WSe 2纳米管是通过硒化溶液合成的氧化钨纳米线合成的。我们发现，在硒化过程中引入特定浓度的H2对于获得直径相对较小的WSe 2纳米管至关重要。所得到的WSe 2纳米管表现出双极晶体管操作与更高的性能比WS 2纳米管。
Recently, the electrical properties of inorganic nanotubes made by rolling up transition metal dichalcogenide sheets have attracted much attention. There are various types of inorganic nanotubes with different metal and chalcogen atoms, which can provide a variety of electrical properties; however, the inorganic nanotubes whose electrical properties were revealed have been mostly limited to WS2 nanotubes. Here, we investigated the electrical properties of another type of inorganic nanotube, namely, WSe2 nanotubes, and revealed their ambipolar transistor properties through the development of a facile synthesis method. WSe2 nanotubes were synthesized by the selenization of solution-synthesized tungsten oxide nanowires. We found that the introduction of a specific concentration of H2 during selenization was crucial for obtaining WSe2 nanotubes with relatively small diameters. The obtained WSe2 nanotubes exhibited ambipolar transistor operation with higher performance than WS2 nanotubes.