Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes
Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes
复制标题
DOI：
10.1021/acsami.0c12638
复制
发表时间：
2020-10-21
影响因子：
9.5
通讯作者：
Furuta, Mamoru
中科院分区：
文献类型：
--
作者：
Magari, Yusaku;Aman, S. G. Mehadi;Furuta, Mamoru
采用Ar + O-2 + H-2溅射法制备了高性能的In-Ga-Zn-O （IGZO: o）肖特基二极管（SDs）。玻璃基板上的IGZO:H SDs具有优异的电学性能，具有3.8 x 10（10）的高整流比、1.17 eV的极高肖特基势垒高度和1.07的低理想因数。结果表明，在IGZO:H沉积过程中加入的氢使带隙能从3.02 eV （IGZO:H）增加到3.29 eV （IGZO:H）。因此，我们认为IGZO:H的带隙能的增加（电子亲合力的降低）有助于SDs的肖特基势垒高度的增加。角分辨硬x射线光电子能谱分析表明，IGZO:H中的氧空位比IGZO中的少得多，特别是在膜表面附近的区域。此外，还发现IGZO:H中的近导带最小态密度低于IGZO。因此，IGZO:H在改善肖特基界面质量方面发挥了关键作用，即增加肖特基势垒高度，减少氧空位，减少近导带最小态。最后，我们在聚萘二甲酸乙酯（聚萘二甲酸乙酯）衬底上制备了柔性的IGZO:H SD，并表现出创纪录的电学性能，其整流比为1.7 x 10(9)，肖特基势垒高度为1.12 eV，理想因子为1.10。据我们所知，在玻璃和聚（萘二甲酸乙酯）衬底上形成的IGZO:H SDs在迄今为止报道的IGZO SDs中性能最好。该方法成功地展示了未来柔性电子应用的巨大潜力。
High-performance In-Ga-Zn-O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 degrees C. IGZO:H was prepared by Ar + O-2 + H-2 sputtering. IGZO:H SDs on a glass substrate exhibited superior electrical properties with a very high rectification ratio of 3.8 x 10(10), an extremely large Schottky barrier height of 1.17 eV, and a low ideality factor of 1.07. It was confirmed that the hydrogen incorporated during IGZO:H deposition increased the band gap energy from 3.02 eV (IGZO) to 3.29 eV (IGZO:H). Thus, it was considered that the increase in band gap energy (decrease in electron affinity) of IGZO:H contributed to the increase in the Schottky barrier height of the SDs. Angle-resolved hard X-ray photoelectron spectroscopy analysis revealed that oxygen vacancies in IGZO:H were much fewer than those in IGZO, especially in the region near the film surface. Moreover, it was found that the density of near-conduction band minimum states in IGZO:H was lower than that in IGZO. Therefore, IGZO:H played a key role in improving the Schottky interface quality, namely, the increase of Schottky barrier height, decrease of oxygen vacancies, and reduction of near-conduction band minimum states. Finally, we fabricated a flexible IGZO:H SD on a poly(ethylene naphthalate) substrate, and it exhibited record electrical properties with a rectification ratio of 1.7 x 10(9), Schottky barrier height of 1.12 eV, and ideality factor of 1.10. To the best of our knowledge, both the IGZO:H SDs formed on glass and poly(ethylene naphthalate) substrates achieved the best performance among the IGZO SDs reported to date. The proposed method successfully demonstrated great potential for future flexible electronic applications.